Method of forming a mass over a semiconductor substrate

ABSTRACT

The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

TECHNICAL FIELD

The invention pertains to methods of electrochemically treatingsemiconductor substrates. The invention includes methods ofelectroplating materials relative to semiconductor constructions, and inparticular aspects pertains to methods of electroplating platinum andother noble metals associated semiconductor constructions. The inventionalso pertains to methods of forming capacitor constructions.

BACKGROUND OF THE INVENTION

Capacitors are utilized in numerous semiconductor constructions,including, for example, dynamic random access memory (DRAM) devices.Capacitors comprise a pair of electrically conductive materials(frequently referred to as a storage node and a capacitor plate) whichare separated from one another by dielectric material. The conductivematerials are thus capacitively coupled with one another.

Various materials have been utilized for the conductive components ofcapacitor constructions, including, for example, metals, metalsilicides, metal nitrides and conductively-doped semiconductor materials(such as, for example, conductively-doped silicon). Materials that canbe particularly useful in capacitor constructions are so-called noblemetals, which include, for example, platinum, rhodium, iridium andruthenium. A difficulty in utilizing the noble metals is in patterningconstructions from the metals. For instance, if platinum is utilized toform a conductive component of a capacitor construction, it can bedifficult to pattern the platinum into a desired shape.

One of the methods that is frequently utilized for patterning platinumis chemical-mechanical polishing. However, such method can smearplatinum. The smearing can cause undesirable defect structures.

It would be desirable to develop new methods of forming noble metalsinto desired shapes for semiconductor applications, and it would beparticularly desirable if such new methods could be applied tofabrication of capacitor structures.

Although the invention was motivated by the applications discussedabove, it is to be understood that the invention is not limited to suchapplications except to the extent that the applications are explicitlyrecited in the claims which follow.

SUMMARY OF THE INVENTION

The invention includes methods of electrochemically treatingsemiconductor substrates. In one aspect, the invention encompasses amethod of electroplating a substance over a semiconductor substrate. Asubstrate having defined first and second regions is provided. The firstand second regions can be defined by a common mask, and accordingly canbe considered to be self-aligned relative to one another. A firstelectrically conductive material is formed over the first region of thesubstrate, and a second electrically conductive material is formed overthe second region. The first and second electrically conductivematerials are exposed to an electrolytic solution while providingelectrical current to the first and second electrically conductivematerials. A desired substance is selectively electroplated onto thefirst electrically conductive material relative to the secondelectrically conductive material during the exposing of the first andsecond electrically conductive materials to the electrolytic solution.

In particular aspects, the invention encompasses methods of formingcapacitor constructions.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic, cross-sectional view of a semiconductorconstruction at a preliminary processing stage of an exemplaryapplication of the present invention.

FIG. 2 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 1 in accordance with an exemplaryaspect of the present invention.

FIG. 3 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 2.

FIG. 4 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 4.

FIG. 6 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 5.

FIG. 7 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 6.

FIG. 8 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 7.

FIG. 9 is a view of a wafer fragment shown at an initial processingstage in accordance with further aspects of the present invention.

FIG. 10 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 9.

FIG. 11 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 10.

FIG. 12 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 11.

FIG. 13 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 12.

FIG. 14 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 13.

FIG. 15 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 14.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A first set of exemplary aspects of the invention are described withreference to FIGS. 1-8. Referring initially to FIG. 1, a fragment of asemiconductor construction 10 is illustrated. Construction 10 comprisesa base 12. Base 12 can comprise, for example, a semiconductive material,such as, for example, monocrystalline silicon. Base 12 can be referredto as a semiconductor substrate. To aid in interpretation of the claimsthat follow, the terms “semiconductive substrate” and “semiconductorsubstrate” are defined to mean any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

A pair of transistor constructions 14 and 16 are supported by base 12.Construction 14 comprises a transistor gate 18, and a pair ofsource/drain regions 20 and 22. Construction 16 comprises a transistorgate 24, and a pair of source/drain regions 26 and 28. Transistor gates18 and 24 can comprise, for example, patterned stacks which include gateoxide and one or more conductive layers. Source/drain regions 20, 22, 26and 28 can correspond to either n-type or p-type doped regions withinsemiconductive material of base 12.

Sidewall spacers 30 extend along sidewalls of transistor gates 18 and24. Sidewall spacers 30 can comprise, for example, one or both ofsilicon dioxide and silicon nitride.

An isolation region 32 extends between transistor constructions 14 and16, and electrically isolates transistor constructions 14 and 16 fromone another. Isolation region 32 can correspond to, for example, ashallow trench isolation region. Accordingly, isolation region 32 cancorrespond to a trench formed within semiconductor material of base 12and filled with a suitable insulative material, such as, for example,silicon dioxide.

A pedestal 34 of electrically conductive material is formed over and inelectrical contact with diffusion region 22, and another pedestal 36 ofelectrically conductive material is formed over and in electricalconnection with diffusion region 26. The conductive material ofpedestals 34 and 36 can comprise, for example, various metals and/orconductively-doped silicon. Pedestals 34 and 36 are optional, and theinvention encompasses other aspects (not shown) in which pedestals 34and 36 are omitted.

A mass 40 of electrically insulative material is formed over base 12, aswell as over transistors 14 and 16, and pedestals 34 and 36. Mass 40 cancomprise, consist essentially of, or consist of, for example,borophosphosilicate glass (BPSG).

An electrically conductive material 42 is formed over mass 40.Electrically conductive material 42 can comprise, consist essentiallyof, or consist of one or both of tantalum and tungsten. Electricallyconductive material 42 will ultimately be utilized for carryingelectrical potential across construction 10 during electrodeposition,and accordingly conductive material 42 is preferably provided over anentirety of an upper surface of the construction comprising the FIG. 1fragment.

A patterned masking material 44 is formed over conductive material 42.Masking material 44 can comprise, for example, photoresist; and can bepatterned utilizing photolithographic processing. Patterned maskingmaterial 44 has openings 46 and 48 extending therethrough.

Referring to FIG. 2, openings 46 and 48 are extended throughelectrically conductive material 42 and into electrically insulativemass 40. In the shown aspect of the invention, openings 46 and 48 areextended to upper surfaces of conductive pedestals 34 and 36,respectively. Openings 46 and 48 can be extended through conductivematerial 42 and insulative material 40 utilizing a suitable etch. Afteropenings 46 and 48 are extended through conductive material 42, maskinglayer 44 (FIG. 1) is removed.

Referring to FIG. 3, an electrically conductive material 50 is formedover conductive material 42 and within openings 46 and 48. Electricallyconductive material 50 only partially fills openings 46 and 48 in theshown aspect of the invention, and accordingly narrows the openings.Electrically conductive material 50 comprises a different compositionthan electrically conductive material 42; and can comprise, consistessentially of, or consist of, for example, one or more of copper,platinum, aluminum and tungsten. In the claims that follow, one ofconductive materials 42 and 50 can be referred to as a first conductivematerial, and the other can be referred to as a second conductivematerial.

Conductive material 50 can be formed by, for example, sputterdeposition. As another example, conductive material 50 can be formed by,for example, atomic layer deposition (ALD). For instance, material 50can consist essentially of platinum, and can be formed utilizing ALDmethodologies.

Referring to FIG. 4, conductive material 50 is removed from overconductive material 42, but left within openings 46 and 48. Such can beaccomplished utilizing, for example, wet etching, dry etching, and/orchemical-mechanical polishing.

After removal of conductive material 50 from over conductive material42, construction 10 can be considered to have two types of definedregions, 60 and 70, which differ from one another in the type ofconductive material present at an upper surface of the construction. Afirst of the defined regions 60 has conductive material 42 at the uppersurface, and a second of the defined regions 70 has conductive material50 at the upper surface. In the shown construction, the second definedregions 70 extend within openings 46 and 48, and the first definedregions 60 do not extend within the openings. It is noted that theterminology of the first and second regions can be reversed.Accordingly, an alternative description of the construction 10 is thatsuch comprises defined first regions 70 and second regions 60; with afirst electrically conductive material 50 extending over the firstregions of the semiconductor substrate and a second electricallyconductive material 42 extending over the second regions 60 of thesemiconductor substrate.

The processing stage of FIG. 4 can be considered to comprise a secondelectrically conductive material 50 formed within openings 46 and 48 butnot over a first electrically conductive material 42. It is noted thatthe terminology of the first and second conductive materials can beutilized as a labeling method for distinguishing materials 42 and 50,rather than as an indication of an order of formation of materials 42and 50. Accordingly, material 50 can be referred to as a first materialand conductive material 42 referred to as a second conductive materialin the claims which follow.

Referring to FIG. 5, electrically conductive materials 42 and 50 areexposed to an electrolytic solution 80. Such can be accomplished bysubmerging construction 10 within a vessel (not shown) containing theelectrolytic solution. A power source 82 is provided, and electricallyconnected between material 42 and solution 80. Power source 82 isutilized to provide voltage (or current) and cause a substance toelectrodeposit (or electroplate) from electrolytic solution 80 ontoconductive material 50. It is noted that the substance may also depositonto material 42. The electrodeposition is selective for conductivematerial 50 (at least initially) so that the electrodeposition ontomaterial 50 is faster than electrodeposition onto material 42, to theextent that any electrodeposition on material 42 occurs. Theelectrodeposition can be referred to as selective electroplating of asubstance from electrolytic solution 80 onto conductive material 50. Ifthe electrodeposition occurs on both materials 50 and 42, theelectrodeposited substance on material 50 is formed to be thicker thanthe substance on material 42 due to the primary electrodeposition of thesubstance on material 50 rather than material 42.

The substance electroplated onto material 50 can comprise, consistessentially of, or consist of one or more noble metals, such as, forexample, platinum, rhodium, iridium and ruthenium. In particularaspects, the material can comprise one or more of platinum, rhodium,iridium, ruthenium, palladium, osmium and cobalt.

The electrolytic solution 80 can comprise, during the electroplating ofa substance from solution 80 onto conductive material 50, a pH of fromabout 0.5 to about 12, a conductivity of from about 25 millisiemens toabout 140 millisiemens, and a temperature of from about 20° C. to about90° C. A pulse waveform of power can be applied from source 82 duringthe electroplating. The pulse waveform can enable a conformal coating ofa substance to electroplate onto material 50 if sufficient rest time isprovided between pulses to replenish a surface concentration of adepositing substance relative to a bulk concentration of the substancewithin solution 80. It can be preferred that a forward (negativepotential) pulse of the waveform be sufficiently short to avoiddepletion of a boundary layer and subsequent formation of concentrationgradients from surfaces of the electroplating substance.

The substance which is ultimately to be electroplated from solution 80onto conductive material 50 can be present as a salt within solution 80.For instance, if platinum is to be electroplated from solution 80 ontoconductive material 50, the platinum can be initially present withinsolution 80 as one or more platinum salts.

The selectivity of the electrodeposition onto conductive material 50relative to conductive material 42 can be accomplished through variousmechanisms. For instance, materials 42 and 50 can be chosen such thatmaterial 42 requires a higher over-potential for electroplating of asubstance thereon than does material 50. Such can be accomplishedthrough the relative composition of material 42 to that of material 50.For instance, material 42 can be chosen to have poor nucleation, growthor adhesion of an electrodeposited substance relative to material 50.Alternatively, or additionally, selective electrodeposition on material50 can be accomplished by providing a stable oxide or other protectivelayer (not shown) over material 42 to protect the material as theconstruction 10 is exposed to solution 80 (with the term “stable”indicating that the protective layer or oxide remains over material 42during an entirety of the exposure to solution 80). The protective layercan alleviate, and even prevent, electrodeposition from occurring overconductive material 42. In some aspects the protective layer can beformed prior to exposing material 42 to solution 80, and in otheraspects the protective layer can form as material 42 is exposed tosolution 80.

In various aspects conductive material 50 can comprise, consistessentially of, or consist of tungsten; and conductive material 42 cancomprise, consist essentially of, or consist of tantalum. In otheraspects, conductive material 50 can comprise, consist essentially of, orconsist of one or both of copper and platinum; and conductive material42 can comprise, consist essentially of, or consist of tungsten. In yetother aspects, conductive material 50 can comprise, consist essentiallyof, or consist of one or more of copper, platinum and aluminum; andconductive material 42 can comprise, consist essentially of, or consistof tantalum.

In some aspects, conductive material 50 can comprise a composition whichforms an oxide or other protective layer thereover prior to exposure toelectrolytic solution 80. In such aspects, it can be desired to removethe protective layer from over conductive material 50 prior to theelectrodeposition. If, for example, conductive material 50 comprisestungsten, and an oxide forms thereover, such oxide can be removed withhydrofluoric acid prior to exposing conductive material 50 toelectrolytic solution 80. In another aspect, the oxide can be removedthrough redox processes occurring during exposure of the oxide toelectrolytic solution 80.

Referring to FIG. 6, construction 10 is illustrated after a substance 90is selectively electroplated over conductive material 50 relative toconductive material 42. In the shown aspect of the invention, substance90 is only on conductive material 50. Accordingly, there has been 100%selectivity for electroplating of substance 90 onto conductive material50 relative to conductive material 42. It is to be understood, however,that the invention encompasses other aspects wherein the selectivity ofelectrodeposition for material 50 relative to material 42 is less than100%.

As discussed previously, substance 90 can comprise, consist essentiallyof, or consist of one or more noble metals, such as, for example, one ormore of platinum, rhodium, iridium and ruthenium. In some aspects,substance 90 can comprise, consist essentially of, or consist of one ormore of platinum, rhodium, iridium, ruthenium, palladium, osmium, andcobalt.

Substance 90 can be, in particular aspects, considered ametal-containing layer which has been formed over selected regions 70 ofa semiconductor substrate. It is noted that substance 90 can beconsidered to have been formed over selected region 70 of the substrateeven if the selectivity for electrodeposition on material 50 relative tomaterial 42 is less than 100%. The electroplating of substance 90 canallow the substance to be more conformally provided than it would be byother methods. The conformality of layer 90 can be enhanced if startinglayer 50 is initially highly conformal, as can occur, for instance, iflayer 50 is provided by an ALD process.

Referring to FIG. 7, electrically conductive material 42 (FIG. 6) isremoved from over mass 40. Such removal can be accomplished by, forexample, chemical-mechanical polishing. A protective material (notshown) can be formed within openings 46 and 48 during thechemical-mechanical polishing to preclude debris from falling into theopenings. A suitable protective material can comprise photoresist. Thephotoresist can be removed after the chemical-mechanical polishingutilizing a suitable etch and/or ashing.

Chemical-mechanical polishing across an upper surface of construction 10forms a planarized upper surface 92.

Referring to FIG. 8, a pair of layers 100 and 102 are formed over mass40 and within openings 46 and 48. Layer 100 is a dielectric material,and layer 102 is an electrically conductive material. The dielectricmaterial of layer 100 can comprise, consist essentially of, or consistof one or more of silicon dioxide, silicon nitride, tantalum pentoxide,and other dielectric materials known in the art to be suitable forutilization in capacitor constructions. The conductive material of layer102 can comprise, for example, metal (such as platinum, copper andaluminum for example), metal alloys (such as copper/aluminum alloy),conductive compositions (such as metal silicides and/orconductively-doped silicon), and other conductive materials known to besuitable for incorporation into capacitor constructions. Substance 90 isseparated from conductive layer 102 by dielectric material 100, and iscapacitively coupled with the conductive material of layer 102.Accordingly, a pair of capacitor constructions 104 and 106 are formedfrom layers 50, 90, 100 and 102 in the shown construction.

The capacitor construction 104 can be connected with a bitline (notshown) through transistor 14, and accordingly can be incorporated into aDRAM array. Similarly, capacitor 106 can be connected with a bitline(not shown) through transistor 16, and can also be incorporated into theDRAM array. Capacitor 104 together with transistor construction 14 canbe considered to comprise a DRAM cell, and similarly capacitor 106together with transistor 16 can be considered to comprise a DRAM cell.

The regions 70 of FIG. 4 can be considered to be self-aligned relativeto the regions 60, in that the regions were simultaneously defined by acommon mask (mask 44 of FIG. 1). Further, the regions 70 can beconsidered to be aligned in both a two-dimensional sense relative to theregions 60, as well as in a three-dimensional sense (with the thirddimension being the depth of the openings formed in regions 70). Theprocessing of FIGS. 5-7 can be considered to selectively electroplate amaterial over one of the self-aligned regions relative to the other(with said one region be region 70 in the shown embodiment, and saidother region being region 60). Although two types self-aligned regionsare formed in the shown methods, it is to be understood that more thantwo types could be formed.

Although the shown embodiments of the present invention compriseselectively electroplating a material on one of two self-aligned regionsrelative to another, it is to be understood that the invention can beutilized for applications other than electroplating. For instance, theinvention can be utilized for anodization to smooth surfaces, or foroxidation to form desired insulative material. Anodization could beaccomplished with the processing of FIGS. 4 and 5 if materials 50 and 42were exposed to an electrolytic solution under conditions which removedsome of one or both of the materials 50 and 42. Such removal couldsmooth uneven surfaces of the materials, and effectively polish thematerials. In particular aspects, one of the materials 50 and 42 couldbe selectively electropolished relative to the other. For instance,material 50 could be selectively polished relative to material 42. Theelectropolished material 50 could then be utilized for electroplating ofmaterial 90 (FIG. 6) thereon, and could subsequently be incorporatedinto a capacitor construction, such as the constructions shown in FIG.8. The term “selectively polished” indicates that the rate of polishingof the first material is faster than the rate of polishing of the secondmaterial, and can include 100% selectivity (i.e., applications in whichthere is no polishing of the second material), or less than 100%selectivity. The conditions utilized for anodization typically compriseutilization of a electrolytic solution having either an acidic or basicpH and having one or more surfactants therein. An appropriate acidic pHcan be formed by, for example, utilizing phosphoric acid or nitric acidin the electrolytic solution.

The invention can be utilized for oxidation of a material utilizing theprocessing of FIGS. 4 and 5. If conductive materials 50 and 42 areexposed to an electrolytic solution under conditions which oxidize oneor both of the materials, the oxidization can convert the conductivematerial to an insulative material. The invention includes applicationsin which one of two self-aligned regions (for instance, region 70 ofFIG. 4) comprises a conductive material (for instance, material 50 ofFIG. 4) which is selectively oxidized relative to a conductive material(for instance, material 42 of FIG. 4) comprised by the other of the twoself-aligned regions (for instance, region 60 of FIG. 4). The term“selectively oxidized” indicates that the rate of oxidation of the firstmaterial is faster than the rate of oxidation of the second material,and can include 100% selectivity (i.e., applications in which there isno oxidation of the second material), or less than 100% selectivity. Inparticular applications a dielectric material consisting of, orconsisting essentially of crystalline Ta₂O₅ is formed from a firstmaterial comprising, consisting essentially of, or consisting of Taand/or TaN by exposing the first material to electrochemical processingwhich converts the first material to the Ta₂O₅. The dielectric materialcan be incorporated into a capacitor construction.

FIGS. 9-14 illustrate additional aspects of the invention. In referringto FIGS. 9-14, similar numbering will be utilized as was used above indescribing FIGS. 1-8, where appropriate.

Referring initially to FIG. 9, a fragment of a semiconductorconstruction 200 is illustrated. Construction 200 comprises the base 12and capacitor constructions 14 and 16 described previously withreference to FIG. 1. Construction 200 also comprises the isolationregion 32, and pedestals 34 and 36 described previously with referenceto FIG. 1. Additionally, construction 200 comprises the mass 40 andelectrically conductive material 42 described previously with referenceto FIG. 1.

A masking material 202 is formed over the conductive material 42 ofconstruction 200. Masking material 202 is patterned to have openings 204and 206 extending therethrough. Masking material 202 can be similar tothe masking material 44 described with reference to FIG. 1, but in theshown embodiment differs in that openings 204 and 206 are wider than theopenings 46 and 48 of the FIG. 1 embodiment.

Referring to FIG. 10, openings 204 and 206 are extended throughelectrically conductive material 42 and into electrically insulativematerial 40. Subsequently, masking material 202 (FIG. 10) is removed.Openings 204 and 206 are extended into mass 40 to about an elevationallevel of uppermost surfaces of pedestals 34 and 36. Accordingly,uppermost surfaces of pedestals 34 and 36 are exposed at bottomperipheries of openings 204 and 206, respectively. In particular aspectsof the invention, pedestals 34 and 36 can both comprise platinum, andaccordingly openings 204 and 206 can be extended downwardly into mass 40to an elevational level at which platinum of pedestals 34 and 36 isexposed within the openings.

Referring to FIG. 11, electrically conductive mass 50 is formed withinopenings 204 and 206 and across an upper surface of electricallyconductive material 42. The construction of FIG. 11 is similar to theconstruction 10 described above with reference to FIG. 3, but differs inthat openings 204 and 206 are wider than the openings 46 and 48 shown inFIG. 3, and also in that conductive material 50 of FIG. 11 is shown tobe substantially thicker than the thickness shown in the FIG. 3construction.

Referring to FIG. 12, material 50 is subjected to an anisotropic (or inother words directional) etch. Such forms material 50 into the shownspacer constructions. In subsequent processing (described below)material 50 will be removed, and accordingly the spacers can beconsidered to be sacrificial spacers.

The construction 200 of FIG. 12 can be considered to have 3 types ofexposed conductive surfaces. Specifically, one type of exposedelectrically conductive surface is an uppermost surface of conductivematerial 42, a second type of exposed electrically conductive surfaceare the upper surfaces of conductor material 50, and a third type ofexposed conductive surface corresponds to the upper surfaces ofpedestals 34 and 36. The three types of electrically conductive surfacescan all be different from one another, or in particular embodiments twoof the three types of surfaces can be identical in composition to oneanother. For instance, the material 50 can be identical in compositionto the pedestals 34 and 36. In an exemplary embodiment, material 50 andpedestals 34 and 36 can all comprise platinum. In other exemplaryembodiments, material 50 can be identical in composition to material 42,and different from the material of pedestals 34 and 36. For instance,pedestals 34 and 36 can each consist essentially of Pt and/or Rh, andmaterials 50 and 42 can both consist essentially of tungsten.

In particular embodiments, materials 42 and 50 will differ from thematerial of pedestals 34 and 36. In such embodiments, the construction200 of FIG. 12 can be subjected to electrolytic processing similar tothat described above with reference to FIG. 4 to selectivelyelectroplate a substance on material pedestals 34 and 36, relative tomaterials 42 and 50. Accordingly, the substance can be selectivelyelectroplated within openings 204 and 206. During such electroplating,conductive materials 42, 50 and 34 preferably together form a continuousconductive surface (i.e., conductive bridge) extending across the wafercomprising fragment 200. The conductive surface is connected to a powersource external of the wafer through conductive material 42, analogouslyto the construction described above with reference to FIG. 5.

FIG. 13 illustrates construction 200 after a substance 210 isselectively electroplated within openings 204 and 206 (with the openings204 and 206 being shown in FIG. 12). Substance 210 can comprise thevarious compositions described above with reference to the substance 90shown in FIG. 6. For instance, substance 210 can comprise, consistessentially of, or consist of one or more noble metals, such as, forexample, platinum, rhodium, iridium and ruthenium.

Referring to FIG. 14, materials 50 and 42 are selectively removedrelative to the substance 210. Such can be accomplished with suitablewet and/or dry etches, and can be simplified if materials 50 and 42comprise the same composition as one another. In the shown aspect of theinvention, materials 50 and 42 are also selectively removed relative tomass-40. Accordingly, openings 212 and 214 are formed around pedestals216 and 218 defined by substance 210. In the cross-sectional view ofFIG. 14 it appears that openings 212 are actually a pair of openingsseparated by pedestal 216, and similarly that openings 214 are a pair ofopenings separated by a pedestal 218. It is to be understood, however,that pedestals 216 and 218 would typically each comprise a continuousouter periphery when viewed from above (with the outer peripheries beingcircular in exemplary constructions), and the openings 212 and 214 wouldextend continuously around such outer peripheries.

Referring to FIG. 15, a dielectric material 100 and capacitor plate 102are formed over pedestals 216 and 218, and within the openings 212 and214. A pair of capacitor constructions 230 and 232 can be considered tocomprise pedestals 216 and 218, respectively, together with dielectricmaterial 100 and capacitor electrode material 102. Capacitorconstructions 230 and 232 can be considered to be “stud” type capacitorconstructions.

Although the invention is described primarily with reference to methodsof forming capacitor constructions, it is to be understood that theinvention can be utilized in other applications.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-65. (canceled)
 66. A method of forming a mass over a semiconductorsubstrate, comprising: forming first and second materials over thesemiconductor substrate; and exposing the first material to anelectrolytic solution while providing electrical current through thefirst and second materials; the second material being oxidized to forman oxide which is stable when exposed to the electrolytic solution; theoxide extending over the second material and being exposed to theelectrolytic solution; the mass being selectively electroplated onto thefirst material relative to the second material during the exposing ofthe first material and oxide to the electrolytic solution.
 67. Themethod of claim 66 wherein the electrolytic solution comprises, duringthe exposing, a pH of from about 0.5 to about 12; a conductivity of fromabout 25 millisiemens to about 140 millisiemens; and a temperature offrom about 20° C. to about 90° C.
 68. The method of claim 66 wherein thefirst electrically conductive material comprises tungsten and the secondelectrically conductive material comprises tantalum.
 69. The method ofclaim 66 wherein the first electrically conductive material consistsessentially of tungsten and the second electrically conductive materialconsists essentially of tantalum.
 70. The method of claim 66 wherein thefirst electrically conductive material comprises copper and the secondelectrically conductive material comprises tantalum.
 71. The method ofclaim 66 wherein the first electrically conductive material consistsessentially of copper and the second electrically conductive materialconsists essentially of tantalum.
 72. The method of claim 66 wherein thefirst electrically conductive material comprises platinum and the secondelectrically conductive material comprises tantalum.
 73. The method ofclaim 66 wherein the first electrically conductive material consistsessentially of platinum and the second electrically conductive materialconsists essentially of tantalum.
 74. The method of claim 66 wherein thefirst electrically conductive material comprises aluminum and the secondelectrically conductive material comprises tantalum.
 75. The method ofclaim 66 wherein the first electrically conductive material consistsessentially of aluminum and the second electrically conductive materialconsists essentially of tantalum.
 76. The method of claim 66 wherein thesubstance comprises platinum.
 77. The method of claim 66 wherein thesubstance consists essentially of platinum.
 78. The method of claim 77wherein the first electrically conductive material comprises tungstenand the second electrically conductive material comprises tantalum. 79.The method of claim 77 wherein the first electrically conductivematerial consists essentially of tungsten and the second electricallyconductive material consists essentially of tantalum.
 80. The method ofclaim 77 wherein the first electrically conductive material comprisescopper and the second electrically conductive material comprisestantalum.
 81. The method of claim 77 wherein the first electricallyconductive material consists essentially of copper and the secondelectrically conductive material consists essentially of tantalum. 82.The method of claim 77 wherein the first electrically conductivematerial comprises platinum and the second electrically conductivematerial comprises tantalum.
 83. The method of claim 77 wherein thefirst electrically conductive material consists essentially of platinumand the second electrically conductive material consists essentially oftantalum.
 84. The method of claim 77 wherein the first electricallyconductive material comprises aluminum and the second electricallyconductive material comprises tantalum.
 85. The method of claim 77wherein the first electrically conductive material consists essentiallyof aluminum and the second electrically conductive material consistsessentially of tantalum. 86-154. (canceled)